[1]裴岩,王蓉,崔灿,等.石墨/4H碳化硅纳米多孔阵列光阳极的制备及其光电催化性能研究[J].浙江理工大学学报,2024,51-52(自科六):801-808.
PEI Yan,WANG Rong,CUI Can,et al.Preparation and photoelectrochemical performance of graphite/4H silicon carbide nanoporous array photoanodes[J].Journal of Zhejiang Sci-Tech University,2024,51-52(自科六):801-808.
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石墨/4H碳化硅纳米多孔阵列光阳极的制备及其光电催化性能研究()
PEI Yan,WANG Rong,CUI Can,et al.Preparation and photoelectrochemical performance of graphite/4H silicon carbide nanoporous array photoanodes[J].Journal of Zhejiang Sci-Tech University,2024,51-52(自科六):801-808.
浙江理工大学学报[ISSN:1673-3851/CN:33-1338/TS]
- 卷:
- 第51-52卷
- 期数:
- 2024年自科第六期
- 页码:
- 801-808
- 栏目:
- 出版日期:
- 2024-11-20
文章信息/Info
- Title:
- Preparation and photoelectrochemical performance of graphite/4H silicon carbide nanoporous array photoanodes
- 分类号:
- TM914-4
- 文献标志码:
- A
- 摘要:
- 为提高4H碳化硅（4H Silicon carbide，4H SiC）纳米材料的光电催化性能，采用两步阳极氧化法制备了4H SiC纳米多孔阵列（Nanoporous array，NA），并通过高温退火制备石墨/4H SiC NA光阳极；通过扫描电子显微镜、透射电子显微镜、X射线光电子能谱仪、高分辨多功能光谱仪和电化学工作站对石墨/4H SiC NA光阳极的形貌、结构和性能进行了表征。结果表明：阳极氧化法能够刻蚀出纳米多孔，有效提高了4H SiC的比表面积，同时增强了电解液与材料的接触面积；经过退火处理后，4H SiC NA光阳极表面含有分散的石墨；在光照和暗场条件下石墨的存在增强了光生载流子的分离效果，经过优化的4H SiC NA光阳极在光功率100 mW/cm 2的模拟太阳光照条件下，相对于可逆氢电极（Reversible hydrogen electrode，RHE），其光电流密度在1 23 V达到4 72 mA/cm 2，相比4H SiC NA光阳极提升了4 14 mA/cm2。该论文结果研究为提升基于4H SiC材料的光电催化制氢性能提供了一种新思路。
参考文献/References:
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备注/Memo
- 备注/Memo:
-
收稿日期： 2024-03-04
网络出版日期：2024-05-08
基金项目： 国家自然科学基金联合基金重点支持项目(U23A20569)；浙江省自然科学基金联合基金重大项目(LHZSD24E020001)；浙江省宽禁带功率半导体材料与器件重点实验室(浙江大学杭州国际科创中心先进半导体研究院)开放课题
作者简介： 裴岩(1999—)，男，山西运城人，硕士研究生，主要从事光电催化材料方面的研究
通信作者： 徐凌波，E-mail：xlb@zstu.edu.cn
