|本期目录/Table of Contents|

[1]车思远,徐凌波,崔灿.异质形核构筑的高效钙钛矿发光二极管[J].浙江理工大学学报,2019,41-42(自科六):740-745.
 CHE Siyuan,XU Lingbo,CUI Can.Efficient perovskite lightemitting diodes based on heterogeneous nucleation[J].Journal of Zhejiang Sci-Tech University,2019,41-42(自科六):740-745.
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异质形核构筑的高效钙钛矿发光二极管()
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浙江理工大学学报[ISSN:1673-3851/CN:33-1338/TS]

卷:
第41-42卷
期数:
2019年自科六期
页码:
740-745
栏目:
出版日期:
2019-10-31

文章信息/Info

Title:
Efficient perovskite lightemitting diodes based on heterogeneous nucleation
文章编号:
1673-3851 (2019) 11-0740-06
作者:
车思远徐凌波崔灿
浙江理工大学理学院,杭州 310018
Author(s):
CHE Siyuan XU Lingbo CUI Can
School of Sciences, Zhejiang Sci-Tech University, Hangzhou 310018, China
关键词:
钙钛矿发光二极管CsPbBr3量子点反溶剂异质形核
分类号:
TM914-4
文献标志码:
A
摘要:
钙钛矿薄膜的制备方法对发光层的性质及发光二极管(LED)的性能有较大影响。将无机钙钛矿CsPbBr3量子点引入到反溶剂中作为形核位点诱导CH-3NH-3PbI-3薄膜异质形核,然后将该薄膜应用于制备发光二极管。结果表明:应用这种异质形核方法不仅能有效降低CH-3NH-3PbI-3薄膜中晶粒尺寸,提高薄膜质量,限制载流子扩散,且量子点表面多余的配体基团可以对CH-3NH-3PbI-3薄膜中表面及晶界的缺陷产生钝化作用,减小非辐射复合,从而增强载流子寿命和提高辐射复合效率;应用该CH-3NH-3PbI-3薄膜作为发光层制备的LED器件,在低电压下具有较低漏电流,最大外量子效率达到0-17%,相比于基础器件提高了3倍。研究结果将为高质量钙钛矿薄膜及发光器件的制备提供有效途径。

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2019-03-03
网络出版日期: 2019-05-05
基金项目:浙江省自然科学基金项目(LY17F040005)
作者简介:车思远(1994-),女,黑龙江哈尔滨人,硕士研究生,主要从事钙钛矿发光二极管方面的研究
通信作者:崔灿,E-mail:cuican@zstu.edu.cn
更新日期/Last Update: 2019-11-25