|本期目录/Table of Contents|

[1]朱小燕a,李培刚a,王顺利a,等. 碳热还原法制备SiC纳米线及其结构表征[J].浙江理工大学学报,2012,29(02):245-248.
　ZHU Xiao\|yana,LI Pei\|ganga,WANG Shun\|lia,et al. Synthesis and Characterization of SiC NanowiresUsing Carbon\|Thermal Reduction[J].Journal of Zhejiang Sci-Tech University,2012,29(02):245-248.
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 碳热还原法制备SiC纳米线及其结构表征()
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浙江理工大学学报[ISSN:1673-3851/CN:33-1338/TS]

卷:
第29卷
期数:
2012年02期
页码:
245-248
栏目:
出版日期:
2012-04-28

文章信息/Info

Title:
 Synthesis and Characterization of SiC NanowiresUsing Carbon\|Thermal Reduction
文章编号:
16733851 (2012) 02024504
作者:
 朱小燕a;  李培刚a;  王顺利a;  刘仁娟a;  陈建军b;  唐为华a
 浙江理工大学,a.光电材料与器件中心;b.材料工程中心， 杭州 310018
Author(s):
 ZHU Xiao\|yana;  LI Pei\|ganga;  WANG Shun\|lia;  LIU Ren\|juana;  CHEN Jian\|junb;  TANG Wei\|huaa
 Zhejiang Sci\|Tech University, a. Center for Optoelectronics Materials and Devices;b. Center for Material Engineering, Hangzhou 310018, China
关键词:
 ; 碳化硅;  纳米线;  碳热还原;  气—固机制
分类号:
O4\|33;O4\|44
文献标志码:
A
摘要:
    采用简单的碳热还原法，以碳粉和SiO2微粉分别作为碳源和硅源，在1550℃高温真空气氛箱式炉中制备SiC纳米线。并利用X射线衍射(XRD)、扫描电镜(SEM)和透射电镜(TEM) 、傅里叶变换红外(FTIR)等测试手段对反应产物进行组分、形貌和结构表征。研究结果表明：产物为直线六棱柱形状的β\|SiC纳米线，直径在50~300 nm之间，纳米线内部含有较多的堆垛层错；纳米线主要以气—固（VS）机制生长。

参考文献/References:

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［5］ 吴旭峰，凌一鸣. 电弧放电法制备SiC纳米线的实验研究［J］. 真空科学与技术学报，2005, 25： 30\|32.
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［7］ Li G Y, Li X D, Chen Z D, et al. Large areas of centimeters\|long SiC nanowires synthesized by pyrolysis of a polymer precursor by a CVD route［J］. J Phys Chem C, 2009, 113: 17655\|17660.
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［9］ Xi G C, Peng Y Y, Wan S M, et al. Lithium\|assisted synthesis and characterization of crystalline 3C\|SiC nanobelts［J］. Journal of Physical Chemistry B, 2004, 108： 20102\|20104.
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备注/Memo

备注/Memo:
 收稿日期： 2010-03-13
基金项目： 国家自然科学基金项目(50672088，50902123，60806045)，国家基础研究项目（973项目）(2010CB933501)
作者简介： 朱小燕(1984-)，女，江西瑞昌人，硕士研究生，主要从事光电功能材料与器件的研究。
通讯作者： 唐为华，电子邮箱：whtang@hotmail.com
更新日期/Last Update: