|本期目录/Table of Contents|

[1]蒋敏,问明亮,席珍强. 太阳电池用α \|SiCx:H薄膜热处理性能研究[J].浙江理工大学学报,2012,29(02):274-276.
　JIANG Min,WEN Ming\|liang,XI Zhen\|qiang. Thermal Properties of α \|SiCx:H Thin Films for Solar Cells[J].Journal of Zhejiang Sci-Tech University,2012,29(02):274-276.
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 太阳电池用α \|SiCx:H薄膜热处理性能研究()
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浙江理工大学学报[ISSN:1673-3851/CN:33-1338/TS]

卷:
第29卷
期数:
2012年02期
页码:
274-276
栏目:
出版日期:
2012-04-28

文章信息/Info

Title:
 Thermal Properties of α \|SiCx:H Thin Films for Solar Cells
文章编号:
16733851 (2012) 02027403
作者:
 蒋敏1;  问明亮2;  席珍强2
 1.杭州士兰集成电路有限公司， 杭州 310018； 2.浙江理工大学材料工程中心， 杭州 310018
Author(s):
 JIANG Min1;  WEN Ming\|liang2;  XI Zhen\|qiang2
 1. Hangzhou Silan Integrated Circuit Co., Ltd, Hangzhou 310018, China;2. Material Engineering Center, Zhejiang Sci\|Tech University, Hangzhou 310018, China
关键词:
 ; α \|SiCx:H薄膜;  快速热处理;  光学性能;  钝化性能
分类号:
TM914.41
文献标志码:
A
摘要:
    对不同温度下PECVD沉积的α \|SiCx:H薄膜进行750℃、30 s的快速热处理性能研究，并利用紫外\|可见\|近红外分光光谱仪、光学膜厚测试仪和微波光电子衰减仪对样品反射率、折射率和少子寿命进行表征。结果表明，快速热处理会使α \|SiCx:H薄膜折射率升高，但对薄膜反射率的影响不大。较低温度（＜300℃）沉积的薄膜在快速热处理之后钝化效果提升，较高温度（≥300℃）沉积的薄膜在快速热处理之后钝化效果有所下降。

参考文献/References:

 ［1］ 〖ZK(#〗Ferre R, Martín I, Ortega P, et al. N\|type emitter surface passivation in c\|Si solar cells by means of antireflective amorphous silicon carbide layers［J］. Journal of Applied Phycology, 2006, 100(7): 73703\|737109.
［2］ Martín I, Vetter M, Orpella A , et al. Characterization and application of α \|SiCx: H films for the passivation of the c\|Si surface［J］. Thin Solid Film, 2002, 403\|404: 476\|479.
［3］ Hossain M, Perez J R S, Rivera J M R, et al. Novel process for low temperature crystallization of α \|SiC: H for optoelectronic applications［J］. Journal of Materials Science, 2009, 20(1): 412\|415.
［4］ Oliveira A R, Carreno M N P. N and p\|type doping of PECVD α \|SiC: H obtained under “silane starving plasma” condition with and without hydrogen dilution［J］. Materials Science and Engineering B, 2006, 128(2): 44\|49.
［5］ Hussam E A, Elgamel. High efficiency polycrystalline silicon solar cells using low temperature PECVD process［J］. IEEE Transactions on Electron Devices, 1998, 45(10): 2131\|2137.
［6］ 张翼英, 杜丕一, 韩高荣, 等. PECVD法制备a\|Si1\|XCX:H薄膜的结构及光学性能研究［J］. 真空科学与技术学报, 2005, 25(3): 192\|195.
［7］ Chen Z, Rohatgi A, Bell R O, et al. Defect passivation in multicrystalline\|Si materials by plasma\|enhanced chemical vapor deposition of SiO2/SiN coatings［J］. Applied Physics Letters, 1994, 65(16): 2078\|2080.

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备注/Memo

备注/Memo:
 收稿日期： 2011-05-23
作者简介： 蒋敏（1976-），男，浙江象山人，工程师，大学本科，主要从事薄膜外延生长的研究。
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