|本期目录/Table of Contents|

[1]石强a,b,陈建军b,等. 碳化硅纳米晶须的制备及热稳定性研究[J].浙江理工大学学报,2011,28(04):558-562.
　SHI Qianga,b,CHEN Jian junb,et al. Synthesis and Thermal Stability of Silicon Carbide Nanowhiskers[J].Journal of Zhejiang Sci-Tech University,2011,28(04):558-562.
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 碳化硅纳米晶须的制备及热稳定性研究()
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浙江理工大学学报[ISSN:1673-3851/CN:33-1338/TS]

卷:
第28卷
期数:
2011年04期
页码:
558-562
栏目:
(自科)生物与生命科学
出版日期:
2011-08-31

文章信息/Info

Title:
 Synthesis and Thermal Stability of Silicon Carbide Nanowhiskers
文章编号:
16733851 (2011) 04055805
作者:
 石强a; b;  陈建军b;  刘羿君a
 浙江理工大学， a. 先进纺织材料与制备技术教育部重点实验室； b. 材料工程中心， 杭州 310018
Author(s):
 SHI Qianga; b;  CHEN Jianjunb;  LIU Yijuna
 Zhejiang SciTech University, a. The Key Laboratory of Advanced Textile Materials and Manufacturing Technology, Ministry of Education; b. Materials Engineering Center, Hangzhou 310018, China
关键词:
 ; 碳化硅;  纳米晶须;  形貌;  热稳定性
分类号:
TQ343
文献标志码:
A
摘要:
    以石墨粉和硅粉为原料，在1550℃下，采用碳热还原法制得碳化硅纳米晶须。X射线衍射(XRD)和场发射扫描电镜(FESEM)表明，产物主要由3CSiC纳米晶须和颗粒组成，晶须直径为100~150 nm，长度为5~15 μm。在空气气氛中的热重分析(TGA)实验显示，温度高于400℃时，产物质量逐渐增加，温度至800℃时质量增加了约1%，增重现象为SiC纳米晶须的氧化所致。产物经1100℃氧化后的XRD表明，SiC被部分氧化生成了无定形二氧化硅。空气气氛中，产物在700、900、1100℃的热稳定性实验表明，在1100℃时，SiC纳米晶须形貌发生了较大变化，其表面出现熔融并粘连在一起。高温下的氧化反应是导致晶须形貌变化的主要原因。

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备注/Memo

备注/Memo:
 收稿日期： 2010-11-01
基金项目： 国家自然科学基金(50902124)；浙江省自然科学基金（Y4090468）
作者简介： 石强（1985-），男，湖南长沙人，硕士研究生，主要从事半导体及纳米纤维材料的研究。
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