|本期目录/Table of Contents|

[1]问明亮,周陈菊,杨成林,等. 快速热处理对PECVD碳化硅薄膜性能的影响[J].浙江理工大学学报,2011,28(04):571-574.
　WEN Ming liang,ZHOU Chen ju,YANG Cheng lin,et al. Effect of Rapid Thermal Processing on the Properties of SiC Thin Films Prepared by PECVD[J].Journal of Zhejiang Sci-Tech University,2011,28(04):571-574.
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 快速热处理对PECVD碳化硅薄膜性能的影响()
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浙江理工大学学报[ISSN:1673-3851/CN:33-1338/TS]

卷:
第28卷
期数:
2011年04期
页码:
571-574
栏目:
(自科)纺织与服装工程
出版日期:
2011-08-31

文章信息/Info

Title:
 Effect of Rapid Thermal Processing on the Properties of SiC Thin Films Prepared by PECVD
文章编号:
16733851 (2011) 04057104
作者:
 问明亮;  周陈菊;  杨成林;  梁萍兰;  席珍强
 浙江理工大学材料工程中心， 杭州 310018
Author(s):
 WEN Mingliang;  ZHOU Chenju;  YANG Chenglin;  LIANG Pinglan;  XI Zhenqiang
 Materials Engineering Center, Zhejiang SciTech University, Hangzhou 310018, China
关键词:
 ; 碳化硅薄膜;  快速热处理;  减反射;  少子寿命
分类号:
TM914.41
文献标志码:
A
摘要:
    使用PECVD在p型单晶硅衬底上沉积非晶碳化硅薄膜，研究快速热处理对薄膜的钝化性能和光学性能的影响。结果显示：随着热处理温度从450℃升高到850℃，薄膜厚度迅速减小；在650℃及以下温度进行热处理后折射率基本不变，但温度继续上升折射率迅速上升；同时热处理对薄膜的厚度和折射率的影响能在很短时间内完成，使薄膜迅速致密化。在低于750℃热处理时，衬底少子寿命增加，在热处理温度高于750℃后少子寿命急剧下降。碳化硅薄膜的反射率在快速热处理之后基本不变。

参考文献/References:

 ［1］ Martin I, Vetter M, Orpella A, et al. Surface passivation of ptype crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films［J］. Applied Physics Letters, 2001, 79(14): 21992201.
［2］ Martin I, Vetter M, Garin M, et al. Crystalline silicon surface passivation with amorphous SiCx:H films deposited by plasmaenhanced chemicalvapor deposition［J］. Journal of Applied Physics, 2005, 98: 110.
［3］ Ferre R, Martin I, Ortega P, et al. ntype emitter surface passivation in cSi solar cells by means of antireflective amorphous silicon carbide layers［J］. Journal of Applied Physics, 2006, 100: 17.
［4］ Huran J, Hotovy I, Pezoltd J, et al. Effect of deposition temperature on the properties of amorphous silicon carbide thin films［J］. The Solid Films, 2006, 515(2): 651653.
［5］ Vetter M, Martin I, Ferre R, et al. Crystalline silicon surface passivation by amorphous silicon carbide films［J］. Solar Energy Materials & Solar Cells, 2007, 91: 174179.
［6］ Lenkeit B, Steckemetz S, Artuso F, et al. Excellent thermal stability of remote plasmaenhanced chemical vapor deposited silicon nitride films for the rear of screenprinted bifacial silicon solar cells［J］. Solar Energy Materials & Solar Cells, 2001, 65: 317323.
［7］ Aberle A, Hezel R. Progress in lowtemperature surface passivation of silicon solar cells using remoteplasma silicon nitride［J］. Progress in Photovoltaics: Research and Applications, 1997, 5(1): 2950.
［8］ Lauinger T, Schmidt J, Aberle A, et al. Record low surface recombination velocities on 1 Ω·cm psilicon using remote plasma silicon nitride passivation［J］. Applied Physics Letters, 1996, 68: 12321234.

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备注/Memo

备注/Memo:
 收稿日期： 2010-12-05
作者简介： 问明亮（1987-），男，湖北荆州人，硕士研究生，主要从事半导体材料的研究。
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